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J. Mater. Res. 12, (1997)931-935
邮箱:wuhuichem@yahoo.com.cn
回复人:latous521, () 时间:2006-01-03 22:41:04   编辑 1楼
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Bibliographic Information

Conductive LaNiO3 electrode grown by pulsed laser ablation on silicon substrate. Sun, Li; Yu, Tao; Chen, Yan-Feng; Zhou, Jun; Ming, Nai-Ben. Nanjing University, National Laboratory of Solid State Microstructures, Nanjing, Peop. Rep. China. Journal of Materials Research (1997), 12(4), 931-935. Publisher: Materials Research Society, CODEN: JMREEE ISSN: 0884-2914. Journal written in English. CAN 126:350392 AN 1997:256297 CAPLUS

Abstract

By using the pulsed laser ablation (PLA) technique, conductive LaNiO3 thin films have been successfully grown on (001) Si substrates. The x-ray diffraction q-2q scan patterns indicate a preferential (110) orientation, and the electron probe microanalyzer investigations show that the three elements La, Ni, and O distribute uniformly in the films. The resistivity of the as-deposited LaNiO3 films display a metallic character. Polycryst. PbTiO3 films are deposited by metalorg. CVD deposition (MOCVD) on these LaNiO3 electrodes. Ferroelectricity measurements of the PbTiO3/LaNiO3 heterostructure prove LaNiO3 to be a promising electrode material in the integration of ferroelecs. and Si wafer.

Indexing -- Section 76-8 (Electric Phenomena)

Electrodes
(conductive LaNiO3 electrode grown by pulsed laser ablation on silicon substrate)

Vapor deposition process
(laser-induced; of conductive LaNiO3 thin films)

Ferroelectricity
(of PbTiO3/LaNiO3 heterostructures)

Laser epitaxy
(of conductive LaNiO3 thin films)

12031-18-4, Lanthanum Nickel oxide (LaNiO3)
Role: DEV (Device component use); FMU (Formation, unclassified); PEP (Physical, engineering or chemical process); PRP (Properties); FORM (Formation, nonpreparative); PROC (Process); USES (Uses)
(conductive LaNiO3 electrode grown by pulsed laser ablation on Si substrate)

7440-21-3, Silicon, uses
Role: NUU (Other use, unclassified); USES (Uses)
(conductive LaNiO3 electrode grown by pulsed laser ablation on silicon substrate)

12060-00-3, Lead titanate
Role: DEV (Device component use); USES (Uses)
(ferroelectricity of PbTiO3/LaNiO3 heterostructures)

Supplementary Terms

laser deposition lanthanum nickelate silicon substrate; ferroelectricity lead titanate lanthanum nickelate heterostructure

Citations

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回复人:platoon, (有机化学) 时间:2006-01-04 12:31:57   编辑 2楼
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